Magnetotransport
When quantum materials, especially 2D materials or multilayers, are subject to the magnetic field during the electron transport at low temperatures, the trajectory of the electrons and the electronic spins need to be taken into account. Quantum Hall effect, a quantum mechanical version of the Hall effect, is one of the phenomena. It is frequently used to characterize modern quantum materials with magnetoresistance. Magnetoresistance is a phenomenon of change in the resistance when a sample submitted to a magnetic field. When a sample contains ferromagnetic metals, the interplay of the magnetization of the sample and spin-polarized current is involved. The electrical resistance may chance through magnetoresistance effects that originate from different physical phenomena, such as giant magnetoresistance and tunnel magnetoresistance effects, which lead to the subject of Spintronics.
Customer References:
Seongshik Oh, Department of Physics and Astronomy, Rutgers University, USA: Phys. Rev. Materials 4, 024203 (2020).
Related Cryostats:
